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| ABM8-48.000MHZ-B2-T | 48MHz ±20ppm 수정 18pF 35옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ABM8-48.000MHZ-B2-T.pdf |
| CM309E20000000ABJT | 20MHz ±30ppm 수정 18pF 40옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, J-리드(Lead) | | CM309E20000000ABJT.pdf |
| 416F44035ATR | 44MHz ±30ppm 수정 6pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F44035ATR.pdf |
| 3EZ180D10E3/TR12 | DIODE ZENER 180V 3W DO204AL | | 3EZ180D10E3/TR12.pdf |
| L-14C8N2JV4T | 8.2nH Unshielded Multilayer Inductor 300mA 330 mOhm Max 0603 (1608 Metric) | | L-14C8N2JV4T.pdf |
| Y212310R0000T9L | RES SMD 10 OHM 0.01% 8W TO220-4 | | Y212310R0000T9L.pdf |
| MBA02040C7507JC100 | RES 0.75 OHM 0.4W 5% AXIAL | | MBA02040C7507JC100.pdf |