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| 500D688M6R3GK2 | 6800µF 6.3V Aluminum Capacitors Axial, Can 2000 Hrs @ 85°C | | 500D688M6R3GK2.pdf |
| GRM1555C1E8R0CA01D | 8pF 25V 세라믹 커패시터 C0G, NP0 0402(1005 미터법) 0.039" L x 0.020" W(1.00mm x 0.50mm) | | GRM1555C1E8R0CA01D.pdf |
| 12105C333JAT2A | 0.033µF 50V 세라믹 커패시터 X7R 1210(3225 미터법) 0.126" L x 0.098" W(3.20mm x 2.50mm) | | 12105C333JAT2A.pdf |
| C901U510JZSDBA7317 | 51pF 440VAC 세라믹 커패시터 SL 방사형, 디스크 0.276" Dia(7.00mm) | | C901U510JZSDBA7317.pdf |
| ABM11AIG-26.000MHZ-4-T3 | 26MHz ±30ppm 수정 10pF 100옴 -40°C ~ 125°C AEC-Q200 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ABM11AIG-26.000MHZ-4-T3.pdf |
| 445C22L30M00000 | 30MHz ±20ppm 수정 12pF 30옴 -20°C ~ 70°C 표면실장(SMD, SMT) 2-SMD | | 445C22L30M00000.pdf |
| 416F37025AKR | 37MHz ±20ppm 수정 8pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F37025AKR.pdf |
| LQW15AN9N6J80D | 9.6nH Unshielded Wirewound Inductor 1.4A 81 mOhm Max 0402 (1005 Metric) | | LQW15AN9N6J80D.pdf |
| RT1206CRB0742K2L | RES SMD 42.2KOHM 0.25% 1/4W 1206 | | RT1206CRB0742K2L.pdf |
| MBA02040C1058FC100 | RES 1.05 OHM 0.4W 1% AXIAL | | MBA02040C1058FC100.pdf |
| RSF3JB1R00 | RES MO 3W 1 OHM 5% AXIAL | | RSF3JB1R00.pdf |