| 06033AR51D4T2A | 0.50pF 25V 세라믹 커패시터 C0G, NP0 0603(1608 미터법) 0.063" L x 0.032" W(1.60mm x 0.81mm) | | 06033AR51D4T2A.pdf |
| 12101C472JAT2A | 4700pF 100V 세라믹 커패시터 X7R 1210(3225 미터법) 0.126" L x 0.098" W(3.20mm x 2.50mm) | | 12101C472JAT2A.pdf |
| VJ0402D3R9DXCAJ | 3.9pF 200V 세라믹 커패시터 C0G, NP0 0402(1005 미터법) 0.040" L x 0.020" W(1.02mm x 0.51mm) | | VJ0402D3R9DXCAJ.pdf |
| VJ0805D151JXAAJ | 150pF 50V 세라믹 커패시터 C0G, NP0 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | VJ0805D151JXAAJ.pdf |
| 416F320X2ADR | 32MHz ±15ppm 수정 18pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F320X2ADR.pdf |
| 416F32012IAR | 32MHz ±10ppm 수정 10pF 200옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F32012IAR.pdf |
| 425F11K025M0000 | 25MHz ±10ppm 수정 8pF 80옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 425F11K025M0000.pdf |
| A2T26H300-24SR6 | IC TRANS RF LDMOS | | A2T26H300-24SR6.pdf |
| 103R-681HS | 680nH Unshielded Inductor 435mA 520 mOhm Max 2-SMD | | 103R-681HS.pdf |
| ERJ-S06F1741V | RES SMD 1.74K OHM 1% 1/8W 0805 | | ERJ-S06F1741V.pdf |
| CMF50665R00FHEB | RES 665 OHM 1/4W 1% AXIAL | | CMF50665R00FHEB.pdf |
| CB10JB5R00 | RES 5 OHM 10W 5% CERAMIC WW | | CB10JB5R00.pdf |