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| VJ0603D6R2CXCAJ | 6.2pF 200V 세라믹 커패시터 C0G, NP0 0603(1608 미터법) 0.063" L x 0.031" W(1.60mm x 0.80mm) | | VJ0603D6R2CXCAJ.pdf |
| VJ0805D180KXCAJ | 18pF 200V 세라믹 커패시터 C0G, NP0 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | VJ0805D180KXCAJ.pdf |
| VJ2220Y394JBAAT4X | 0.39µF 50V 세라믹 커패시터 X7R 2220(5750 미터법) 0.226" L x 0.200" W(5.74mm x 5.08mm) | | VJ2220Y394JBAAT4X.pdf |
| CX3225SB27000D0GPSCC | 27MHz ±15ppm 수정 8pF 50옴 -40°C ~ 85°C AEC-Q200 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | CX3225SB27000D0GPSCC.pdf |
| 416F2501XCDR | 25MHz ±10ppm 수정 18pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F2501XCDR.pdf |
| VS-10ETF10FPPBF | DIODE GEN PURP 1KV 10A TO220FP | | VS-10ETF10FPPBF.pdf |
| MBRB10H100HE3/81 | DIODE SCHOTTKY 100V 10A TO263AB | | MBRB10H100HE3/81.pdf |
| ERA-6AEB1743V | RES SMD 174K OHM 0.1% 1/8W 0805 | | ERA-6AEB1743V.pdf |
| AT0402DRD071KL | RES SMD 1K OHM 0.5% 1/16W 0402 | | AT0402DRD071KL.pdf |
| E2E2-X18MY1-US 5M | Inductive Proximity Sensor 0.709" (18mm) IP67, NEMA 1,4,6,12,13 Cylinder, Threaded - M30 | | E2E2-X18MY1-US 5M.pdf |