-Kemet.jpg) | C1206C683F3GACTU | 0.068µF 25V 세라믹 커패시터 C0G, NP0 1206(3216 미터법) 0.126" L x 0.063" W(3.20mm x 1.60mm) | | C1206C683F3GACTU.pdf |
 | GRM0335C1E7R4DD01D | 7.4pF 25V 세라믹 커패시터 C0G, NP0 0201(0603 미터법) 0.024" L x 0.012" W(0.60mm x 0.30mm) | | GRM0335C1E7R4DD01D.pdf |
 | F339MX251031JII2B0 | 1µF Film Capacitor 310V 630V Polypropylene (PP), Metallized Radial 1.024" L x 0.472" W (26.00mm x 12.00mm) | | F339MX251031JII2B0.pdf |
 | MKP386M520085JT6 | 2µF Film Capacitor 450V 850V Polypropylene (PP), Metallized Rectangular Box 1.732" L x 0.866" W (44.00mm x 22.00mm) | | MKP386M520085JT6.pdf |
 | FRS-R-35 | FUSE TRON DUAL ELEMENT FUSE CLAS | | FRS-R-35.pdf |
 | 402F250XXCDR | 25MHz ±15ppm 수정 18pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 402F250XXCDR.pdf |
 | NX2520SA-40.000000MHZ-W3 | 40MHz ±10ppm 수정 10pF 50옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | NX2520SA-40.000000MHZ-W3.pdf |
 | ELL-ATV221M | 220µH Shielded Wirewound Inductor 700mA 360 mOhm Nonstandard | | ELL-ATV221M.pdf |
 | RCR875DNP-2R3L | 2.3µH Shielded Inductor 3.45A 25 mOhm Max Radial | | RCR875DNP-2R3L.pdf |
 | CRCW25127R87FKEGHP | RES SMD 7.87 OHM 1% 1.5W 2512 | | CRCW25127R87FKEGHP.pdf |
 | CMF50221K00BHEB | RES 221K OHM 1/4W .1% AXIAL | | CMF50221K00BHEB.pdf |
 | TSCDLNN100MDUCV | Pressure Sensor ±1.45 PSI (±10 kPa) Differential Male - 0.1" (2.47mm) Tube 0 mV ~ 22 mV (5V) 8-DIP (0.524", 13.30mm), Top Port | | TSCDLNN100MDUCV.pdf |