| USR1C221MDD1TD | 220µF 16V Aluminum Capacitors Radial, Can 2000 Hrs @ 85°C | | USR1C221MDD1TD.pdf |
| GRM0335C1HR40BA01D | 0.40pF 50V 세라믹 커패시터 C0G, NP0 0201(0603 미터법) 0.024" L x 0.012" W(0.60mm x 0.30mm) | | GRM0335C1HR40BA01D.pdf |
| C901U102MYWDCAWL35 | 1000pF 400VAC 세라믹 커패시터 Y5U(E) 방사형, 디스크 0.276" Dia(7.00mm) | | C901U102MYWDCAWL35.pdf |
| FA-238 16.0000MB-B0 | 16MHz ±50ppm 수정 16pF 80옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | FA-238 16.0000MB-B0.pdf |
| 416F250X2IKR | 25MHz ±15ppm 수정 8pF 200옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F250X2IKR.pdf |
| MA-505 25.0000M-C3: ROHS | 25MHz ±50ppm 수정 18pF 40옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, J-리드(Lead) | | MA-505 25.0000M-C3: ROHS.pdf |
| SIT8008BI-82-30E-4.194304X | OSC XO 3.0V 4.194304MHZ OE | | SIT8008BI-82-30E-4.194304X.pdf |
| IHSM5832ER272L | 2.7mH Unshielded Inductor 200mA 11.29 Ohm Max Nonstandard | | IHSM5832ER272L.pdf |
| 0603R-39NK | 39nH Unshielded Wirewound Inductor 600mA 250 mOhm Max 2-SMD | | 0603R-39NK.pdf |
| IMC1812ES681K | 680µH Unshielded Wirewound Inductor 50mA 30 Ohm Max 1812 (4532 Metric) | | IMC1812ES681K.pdf |
| AT0603DRE078K06L | RES SMD 8.06KOHM 0.5% 1/10W 0603 | | AT0603DRE078K06L.pdf |
| PLT0805Z9651LBTS | RES SMD 9.65KOHM 0.01% 1/4W 0805 | | PLT0805Z9651LBTS.pdf |