| C0805C109DBGAC7800 | 1pF 630V 세라믹 커패시터 C0G, NP0 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | C0805C109DBGAC7800.pdf |
| C941U821KZYDAAWL20 | 820pF 440VAC 세라믹 커패시터 Y5P(B) 방사형, 디스크 0.433" Dia(11.00mm) | | C941U821KZYDAAWL20.pdf |
| MMP6S15K-F | 0.015µF Film Capacitor 250V 630V Polyester, Metallized Axial 0.394" W, 0.236" T x 0.670" L (10.00mm, 6.00mm x 17.00mm) | | MMP6S15K-F.pdf |
| SMCG14CA-HRA | TVS DIODE 14VWM 23.2VC SMCG | | SMCG14CA-HRA.pdf |
| 416F37425CAR | 37.4MHz ±20ppm 수정 10pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F37425CAR.pdf |
| KC5032K18.4320C10E00 | 18.432MHz CMOS XO (Standard) Oscillator Surface Mount 1.8V, 2.5V, 3.3V 3.5mA Standby (Power Down) | | KC5032K18.4320C10E00.pdf |
| SIT9120AI-2C2-25E125.00000Y | OSC XO 2.5V 125MHZ | | SIT9120AI-2C2-25E125.00000Y.pdf |
| DSC1001AE1-054.0000T | 54MHz CMOS MEMS (Silicon) Oscillator Surface Mount 1.8 V ~ 3.3 V 7.2mA Standby (Power Down) | | DSC1001AE1-054.0000T.pdf |
| DMG2301L-13 | MOSFET P-CH 20V 3A SOT23 | | DMG2301L-13.pdf |
| RJH60V1BDPE-00#J3 | IGBT 600V 16A 52W LDPAK | | RJH60V1BDPE-00#J3.pdf |
| IMC1812ES470J | 47µH Unshielded Wirewound Inductor 140mA 5 Ohm Max 1812 (4532 Metric) | | IMC1812ES470J.pdf |
| MBA02040C1919FRP00 | RES 19.1 OHM 0.4W 1% AXIAL | | MBA02040C1919FRP00.pdf |