| VJ0402D0R9DLAAC | 0.90pF 50V 세라믹 커패시터 C0G, NP0 0402(1005 미터법) 0.040" L x 0.020" W(1.02mm x 0.51mm) | | VJ0402D0R9DLAAC.pdf |
| 1808AA471KAT9A | 470pF 1000V(1kV) 세라믹 커패시터 C0G, NP0 1808(4520 미터법) 0.180" L x 0.080" W(4.57mm x 2.03mm) | | 1808AA471KAT9A.pdf |
| GRM2195C2A5R1DD01D | 5.1pF 100V 세라믹 커패시터 C0G, NP0 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | GRM2195C2A5R1DD01D.pdf |
| B32652A4334K | 0.33µF Film Capacitor 200V 400V Polypropylene (PP), Metallized Radial 0.709" L x 0.335" W (18.00mm x 8.50mm) | | B32652A4334K.pdf |
| F1778322M2DBB0 | 0.022µF Film Capacitor 310V 630V Polypropylene (PP), Metallized Radial 0.492" L x 0.158" W (12.50mm x 4.00mm) | | F1778322M2DBB0.pdf |
| CDV30EH680JO3 | MICA | | CDV30EH680JO3.pdf |
| 3.0SMCJ8.0ATR | TVS DIODE 8VWM 13.6VC SMC | | 3.0SMCJ8.0ATR.pdf |
| FA-238 30.0000MB50X-K0 | 30MHz ±50ppm 수정 10pF 40옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | FA-238 30.0000MB50X-K0.pdf |
| 416F30033AKT | 30MHz ±30ppm 수정 8pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F30033AKT.pdf |
| BUK962R8-60E,118 | MOSFET N-CH 60V 120A D2PAK | | BUK962R8-60E,118.pdf |
| TNPW060364K9BEEN | RES SMD 64.9KOHM 0.1% 1/10W 0603 | | TNPW060364K9BEEN.pdf |
| P51-100-S-O-I12-4.5V-000-000 | Pressure Sensor 100 PSI (689.48 kPa) Sealed Gauge Female - 7/16" (11.11mm) UNF 0.5 V ~ 4.5 V Cylinder | | P51-100-S-O-I12-4.5V-000-000.pdf |