 | K181M10X7RF53L2 | 180pF 50V 세라믹 커패시터 X7R 방사 0.142" L x 0.091" W(3.60mm x 2.30mm) | | K181M10X7RF53L2.pdf |
.jpg) | CC1210KKX7RABB683 | 0.068µF 200V 세라믹 커패시터 X7R 1210(3225 미터법) 0.126" L x 0.098" W(3.20mm x 2.50mm) | | CC1210KKX7RABB683.pdf |
 | C1825C821KZGACTU | 820pF 2500V(2.5kV) 세라믹 커패시터 C0G, NP0 1825(4564 미터법) 0.177" L x 0.252" W(4.50mm x 6.40mm) | | C1825C821KZGACTU.pdf |
 | MKP383316063JDA2B0 | 0.016µF Film Capacitor 220V 630V Polypropylene (PP), Metallized Radial 0.492" L x 0.236" W (12.50mm x 6.00mm) | | MKP383316063JDA2B0.pdf |
 | GTCA28-801M-R05 | GDT 800V 20% 5KA THROUGH HOLE | | GTCA28-801M-R05.pdf |
.jpg) | ABM8-12.000MHZ-B2-T | 12MHz ±20ppm 수정 18pF 120옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ABM8-12.000MHZ-B2-T.pdf |
 | ABM10-26.000MHZ-D30-T3 | 26MHz ±20ppm 수정 10pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ABM10-26.000MHZ-D30-T3.pdf |
 | NX3225SA-39.000000MHZ-B4 | 39MHz ±10ppm 수정 12pF 50옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | NX3225SA-39.000000MHZ-B4.pdf |
 | TB-44.000MDD-T | 44MHz CMOS MEMS (Silicon) Oscillator Surface Mount 1.8V Enable/Disable | | TB-44.000MDD-T.pdf |
.jpg) | AC1210FR-07105RL | RES SMD 105 OHM 1% 1/2W 1210 | | AC1210FR-07105RL.pdf |
.jpg) | PHP00805H1112BBT1 | RES SMD 11.1K OHM 0.1% 5/8W 0805 | | PHP00805H1112BBT1.pdf |
 | P51-3000-A-AA-M12-20MA-000-000 | Pressure Sensor 3000 PSI (20684.27 kPa) Absolute Male - 7/16" (11.11mm) UNF 4 mA ~ 20 mA Cylinder | | P51-3000-A-AA-M12-20MA-000-000.pdf |