 | RHE5G2A271J1A2A03B | 270pF 100V 세라믹 커패시터 X8G 방사 0.157" L x 0.098" W(4.00mm x 2.50mm) | | RHE5G2A271J1A2A03B.pdf |
 | VJ0805D620FXPAC | 62pF 250V 세라믹 커패시터 C0G, NP0 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | VJ0805D620FXPAC.pdf |
 | 0JLS080.V | FUSE CRTRDGE 80A 600VAC CYLINDR | | 0JLS080.V.pdf |
 | SMBJ5.0A-13-F | TVS DIODE 5VWM 9.2VC SMB | | SMBJ5.0A-13-F.pdf |
 | 7S-25.000MAHE-T | 25MHz ±30ppm 수정 12pF 80옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 7S-25.000MAHE-T.pdf |
 | 416F374X2CKR | 37.4MHz ±15ppm 수정 8pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F374X2CKR.pdf |
 | 416F260X2IKT | 26MHz ±15ppm 수정 8pF 200옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F260X2IKT.pdf |
 | SIT8008BI-31-33E-38.7853Y | OSC XO 3.3V 38.7853MHZ OE | | SIT8008BI-31-33E-38.7853Y.pdf |
 | ELJ-QE8N2ZFA | 8.2nH Unshielded Multilayer Inductor 490mA 170 mOhm Max 0603 (1608 Metric) | | ELJ-QE8N2ZFA.pdf |
 | AIUR-16-222K | 2.2mH Unshielded Wirewound Inductor 95mA 6.2 Ohm Max Radial | | AIUR-16-222K.pdf |
 | RG2012P-754-D-T5 | RES SMD 750K OHM 0.5% 1/8W 0805 | | RG2012P-754-D-T5.pdf |
 | CMF5549R900DHBF | RES 49.9 OHM 1/2W .5% AXIAL | | CMF5549R900DHBF.pdf |