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| C2012CH2A272K125AA | 2700pF 100V 세라믹 커패시터 CH 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | C2012CH2A272K125AA.pdf |
| VJ1210Y823JBBAT4X | 0.082µF 100V 세라믹 커패시터 X7R 1210(3225 미터법) 0.132" L x 0.098" W(3.35mm x 2.50mm) | | VJ1210Y823JBBAT4X.pdf |
| V14E385P | VARISTOR 620V 6KA DISC 14MM | | V14E385P.pdf |
| ECS-240-20-33-DU-TR | 24MHz ±50ppm 수정 20pF 40옴 -55°C ~ 125°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ECS-240-20-33-DU-TR.pdf |
| SIT8209AI-3-18E | 80.000001MHz ~ 220MHz LVCMOS, LVTTL MEMS (Silicon) Programmable Oscillator Surface Mount 1.8V 33mA Enable/Disable | | SIT8209AI-3-18E.pdf |
| SRN6028-3R9M | 3.9µH Unshielded Wirewound Inductor 3A 38 mOhm Max Nonstandard | | SRN6028-3R9M.pdf |
| MCT5211-X009 | Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-SMD | | MCT5211-X009.pdf |
| ERA-8ARB1182V | RES SMD 11.8K OHM 0.1% 1/4W 1206 | | ERA-8ARB1182V.pdf |
| MNR18ERAPJ150 | RES ARRAY 8 RES 15 OHM 1606 | | MNR18ERAPJ150.pdf |
| HSCDRRN100MDAA5 | Pressure Sensor ±1.45 PSI (±10 kPa) Differential Male - 0.08" (1.93mm) Tube, Dual 0.5 V ~ 4.5 V 8-DIP (0.524", 13.30mm), Dual Ports, Same Side | | HSCDRRN100MDAA5.pdf |
| 1 INCH-G-4V-PRIME | Pressure Sensor 0.04 PSI (0.25 kPa) Vented Gauge Male - 0.19" (4.83mm) Tube, Dual 0.25 V ~ 4.25 V 4-SIP Module | | 1 INCH-G-4V-PRIME.pdf |