| HBX472SBBCF0KR | 4700pF 2000V(2kV) 세라믹 커패시터 방사형, 디스크 0.354" Dia(9.00mm) | | HBX472SBBCF0KR.pdf |
| VJ0603D270FXAAC | 27pF 50V 세라믹 커패시터 C0G, NP0 0603(1608 미터법) 0.063" L x 0.031" W(1.60mm x 0.80mm) | | VJ0603D270FXAAC.pdf |
| LD14WC103KAB1A | 10000pF 2500V(2.5kV) 세라믹 커패시터 X7R 2225(5763 미터법) 0.225" L x 0.250" W(5.72mm x 6.35mm) | | LD14WC103KAB1A.pdf |
| GRM1556R1H6R1CZ01D | 6.1pF 50V 세라믹 커패시터 R2H 0402(1005 미터법) 0.039" L x 0.020" W(1.00mm x 0.50mm) | | GRM1556R1H6R1CZ01D.pdf |
| BFC237528681 | 680pF Film Capacitor 400V 1000V (1kV) Polypropylene (PP), Metallized Radial 0.571" L x 0.217" W (14.50mm x 5.50mm) | | BFC237528681.pdf |
| 416F3201XALR | 32MHz ±10ppm 수정 12pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F3201XALR.pdf |
| 416F40613CKT | 40.61MHz ±10ppm 수정 8pF 100옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F40613CKT.pdf |
| 416F52012IDT | 52MHz ±10ppm 수정 18pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F52012IDT.pdf |
| ZXTN25012EFLTA | TRANS NPN 12V 2A SOT23-3 | | ZXTN25012EFLTA.pdf |
| S0402-33NG3S | 33nH Unshielded Wirewound Inductor 400mA 370 mOhm Max 0402 (1005 Metric) | | S0402-33NG3S.pdf |
| PE2010FKE7W0R04L | RES SMD 0.04 OHM 1% 1W 2010 | | PE2010FKE7W0R04L.pdf |
| AF124-FR-0727RL | RES ARRAY 4 RES 27 OHM 0804 | | AF124-FR-0727RL.pdf |