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| 416F38433CTR | 38.4MHz ±30ppm 수정 6pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F38433CTR.pdf |
| 416F30025AKT | 30MHz ±20ppm 수정 8pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F30025AKT.pdf |
| 416F32033CLT | 32MHz ±30ppm 수정 12pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F32033CLT.pdf |
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| B82422H1682J | 6.8µH Unshielded Wirewound Inductor 570mA 350 mOhm Max 2-SMD | | B82422H1682J.pdf |
| CRCW060311K0FKTA | RES SMD 11K OHM 1% 1/10W 0603 | | CRCW060311K0FKTA.pdf |