 | RH223C476MA3RA3 | 47µF 25V 세라믹 커패시터 X7R 스택 SMD, 4 J리드(Lead) 0.300" L x 0.213" W(7.62mm x 5.40mm) | | RH223C476MA3RA3.pdf |
 | VJ0402D0R5BXCAP | 0.50pF 200V 세라믹 커패시터 C0G, NP0 0402(1005 미터법) 0.040" L x 0.020" W(1.02mm x 0.51mm) | | VJ0402D0R5BXCAP.pdf |
 | SR151A680GAATR2 | 68pF 100V 세라믹 커패시터 C0G, NP0 방사 0.150" L x 0.100" W(3.81mm x 2.54mm) | | SR151A680GAATR2.pdf |
 | 2225GC103MAT9A | 10000pF 2000V(2kV) 세라믹 커패시터 X7R 2225(5763 미터법) 0.225" L x 0.250" W(5.72mm x 6.35mm) | | 2225GC103MAT9A.pdf |
 | BF074E0394J | 0.39µF Film Capacitor 63V 100V Polyester, Metallized Radial 0.295" L x 0.197" W (7.50mm x 5.00mm) | | BF074E0394J.pdf |
 | 173D226X9010WE3 | 22µF Molded Tantalum Capacitors 10V Axial 0.180" Dia x 0.345" L (4.57mm x 8.76mm) | | 173D226X9010WE3.pdf |
 | 416F32022ADR | 32MHz ±20ppm 수정 18pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F32022ADR.pdf |
 | 416F30025CTT | 30MHz ±20ppm 수정 6pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F30025CTT.pdf |
 | SCMS5D20-8R2 | 8.2µH Shielded Inductor 1.62A 110 mOhm Max Nonstandard | | SCMS5D20-8R2.pdf |
 | ERJ-PA3J4R7V | RES SMD 4.7 OHM 5% 1/4W 0603 | | ERJ-PA3J4R7V.pdf |
.jpg) | RC0402DR-07487KL | RES SMD 487K OHM 0.5% 1/16W 0402 | | RC0402DR-07487KL.pdf |
.jpg) | CPF1206B267RE1 | RES SMD 267 OHM 0.1% 1/8W 1206 | | CPF1206B267RE1.pdf |