| GRM1885C2A430JA01D | 43pF 100V 세라믹 커패시터 C0G, NP0 0603(1608 미터법) 0.063" L x 0.031" W(1.60mm x 0.80mm) | | GRM1885C2A430JA01D.pdf |
| VJ1206Y822KBCAT4X | 8200pF 200V 세라믹 커패시터 X7R 1206(3216 미터법) 0.132" L x 0.063" W(3.35mm x 1.60mm) | | VJ1206Y822KBCAT4X.pdf |
| 562R5GAD15LA | 1500pF 1000V(1kV) 세라믹 커패시터 Z5U 방사형, 디스크 0.291" Dia(7.40mm) | | 562R5GAD15LA.pdf |
| TPSMP16AHM3/85A | TVS DIODE 13.6VWM DO220AA | | TPSMP16AHM3/85A.pdf |
| 7A-30.000MAHE-T | 30MHz ±30ppm 수정 12pF 50옴 -40°C ~ 85°C 표면실장(SMD, SMT) 2-SMD, 무연(DFN, LCC) | | 7A-30.000MAHE-T.pdf |
| 416F380X2ADT | 38MHz ±15ppm 수정 18pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F380X2ADT.pdf |
| MJE15031G | TRANS PNP 150V 8A TO220AB | | MJE15031G.pdf |
| SD6030-120-R | 11.3µH Shielded Wirewound Inductor 1.99A 76 mOhm Max Nonstandard | | SD6030-120-R.pdf |
| 0819-94J | 820µH Unshielded Molded Inductor 25.5mA 72 Ohm Max Axial | | 0819-94J.pdf |
| MCR10EZPF80R6 | RES SMD 80.6 OHM 1% 1/8W 0805 | | MCR10EZPF80R6.pdf |
| CMF5512R100FHEB | RES 12.1 OHM 1/2W 1% AXIAL | | CMF5512R100FHEB.pdf |
| SSCDRRN001PDSA3 | Pressure Sensor ±1 PSI (±6.89 kPa) Differential Male - 0.08" (1.93mm) Tube, Dual 12 b 8-DIP (0.524", 13.30mm), Dual Ports, Same Side | | SSCDRRN001PDSA3.pdf |