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| B32776E1106K | 10µF Film Capacitor 1300V (1.3kV) Polypropylene (PP), Metallized Radial 1.654" L x 1.102" W (42.00mm x 28.00mm) | | B32776E1106K.pdf |
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| 416F5201XALT | 52MHz ±10ppm 수정 12pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F5201XALT.pdf |
| 416F37425ILT | 37.4MHz ±20ppm 수정 12pF 200옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F37425ILT.pdf |
| TC-106.250MDE-T | 106.25MHz CMOS MEMS (Silicon) Oscillator Surface Mount 1.8V Enable/Disable | | TC-106.250MDE-T.pdf |
| MLF2012DR82KT000 | 820nH Shielded Multilayer Inductor 150mA 650 mOhm Max 0805 (2012 Metric) | | MLF2012DR82KT000.pdf |
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