 | LXY10VB682M16X35LL | 6800µF 10V Aluminum Capacitors Radial, Can 8000 Hrs @ 105°C | | LXY10VB682M16X35LL.pdf |
-14.jpg) | C2012X7R2A472K/10 | 4700pF 100V 세라믹 커패시터 X7R 0805(2012 미터법) 0.079" L x 0.049" W(2.00mm x 1.25mm) | | C2012X7R2A472K/10.pdf |
 | C901U101KYYDBAWL40 | 100pF 400VAC 세라믹 커패시터 Y5P(B) 방사형, 디스크 0.276" Dia(7.00mm) | | C901U101KYYDBAWL40.pdf |
 | GQM1555C2D4R8BB01D | 4.8pF 200V 세라믹 커패시터 C0G, NP0 0402(1005 미터법) 0.039" L x 0.020" W(1.00mm x 0.50mm) | | GQM1555C2D4R8BB01D.pdf |
 | ABM8AIG-50.000MHZ-12-2Z-T3 | 50MHz ±20ppm 수정 12pF 35옴 -40°C ~ 125°C AEC-Q200 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ABM8AIG-50.000MHZ-12-2Z-T3.pdf |
 | 9C-48.000MEEJ-T | 48MHz ±10ppm 수정 18pF 80옴 -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US | | 9C-48.000MEEJ-T.pdf |
 | 7A-16.9344MAAE-T | 16.9344MHz ±30ppm 수정 12pF 50옴 -20°C ~ 70°C 표면실장(SMD, SMT) 2-SMD, 무연(DFN, LCC) | | 7A-16.9344MAAE-T.pdf |
 | P0648.192NLT | 1.9µH Unshielded Wirewound Inductor 9.6A 7.5 mOhm Max Nonstandard | | P0648.192NLT.pdf |
 | CRCW12183R90FKEK | RES SMD 3.9 OHM 1% 1W 1218 | | CRCW12183R90FKEK.pdf |
.jpg) | RT0805WRB0719R1L | RES SMD 19.1 OHM 0.05% 1/8W 0805 | | RT0805WRB0719R1L.pdf |
 | 90J6K2 | RES 6.2K OHM 11W 5% AXIAL | | 90J6K2.pdf |
 | MIS2DHTR | Accelerometer X, Y, Z Axis ±2g, 4g, 8g, 16g 0.5Hz ~ 672kHz 12-LGA (2x2) | | MIS2DHTR.pdf |