 | 1825CC154MAT9A | 0.15µF 630V 세라믹 커패시터 X7R 1825(4564 미터법) 0.177" L x 0.252" W(4.50mm x 6.40mm) | | 1825CC154MAT9A.pdf |
 | GCM0335C1E7R8DD03D | 7.8pF 25V 세라믹 커패시터 C0G, NP0 0201(0603 미터법) 0.024" L x 0.012" W(0.60mm x 0.30mm) | | GCM0335C1E7R8DD03D.pdf |
 | MKP1841310136 | 10000pF Film Capacitor 650V 1600V (1.6kV) Polypropylene (PP), Metallized Radial 1.024" L x 0.236" W (26.00mm x 6.00mm) | | MKP1841310136.pdf |
 | MKP383416140JKM2T0 | 0.16µF Film Capacitor 500V 1400V (1.4kV) Polypropylene (PP), Metallized Radial 1.220" L x 0.827" W (31.00mm x 21.00mm) | | MKP383416140JKM2T0.pdf |
 | P4KE62A-B | TVS DIODE 53VWM 85VC AXIAL | | P4KE62A-B.pdf |
 | ABLSG-16.9344MHZ-D2Y-T | 16.9344MHz ±20ppm 수정 18pF 40옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US - 3리드(Lead) | | ABLSG-16.9344MHZ-D2Y-T.pdf |
 | 7B-29.4912MBBK-T | 29.4912MHz ±50ppm 수정 20pF 40옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 7B-29.4912MBBK-T.pdf |
 | 402F500XXCKR | 50MHz ±15ppm 수정 8pF 60옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 402F500XXCKR.pdf |
 | 416F37435ATT | 37.4MHz ±30ppm 수정 6pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F37435ATT.pdf |
-TDK.jpg) | MLF2012K560KT000 | 56µH Shielded Multilayer Inductor 4mA 2.8 Ohm Max 0805 (2012 Metric) | | MLF2012K560KT000.pdf |
.jpg) | RP73D2B127RBTG | RES SMD 127 OHM 0.1% 1/4W 1206 | | RP73D2B127RBTG.pdf |
,-Convex,-Long-Side-Terminals.jpg) | YC164-FR-0743R2L | RES ARRAY 4 RES 43.2 OHM 1206 | | YC164-FR-0743R2L.pdf |