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 | MKP386M510100JT2 | 1µF Film Capacitor 500V 1000V (1kV) Polypropylene (PP), Metallized Rectangular Box 1.319" L x 0.866" W (33.50mm x 22.00mm) | | MKP386M510100JT2.pdf |
 | 416F26035CTR | 26MHz ±30ppm 수정 6pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F26035CTR.pdf |
 | 416F260XXCDT | 26MHz ±15ppm 수정 18pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F260XXCDT.pdf |
 | 416F300X3ATT | 30MHz ±15ppm 수정 6pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F300X3ATT.pdf |
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 | MCD132-12IO1 | MOD THYRISTOR/DIODE 1200V Y4-M6 | | MCD132-12IO1.pdf |
 | IXFB150N65X2 | MOSFET N-CH 650V 150A PLUS264 | | IXFB150N65X2.pdf |
-TNP-SERIES.jpg) | TNPW08054K99BXEN | RES SMD 4.99K OHM 0.1% 1/8W 0805 | | TNPW08054K99BXEN.pdf |
 | RGC1206FTD237R | RES SMD 237 OHM 1% 1/4W 1206 | | RGC1206FTD237R.pdf |
 | CRCW1210976KFKEA | RES SMD 976K OHM 1% 1/2W 1210 | | CRCW1210976KFKEA.pdf |
 | TBPDLNS150PGUCV | Pressure Sensor 150 PSI (1034.21 kPa) Vented Gauge Male - 0.13" (3.18mm) Tube 0 mV ~ 45.75 mV (5V) 4-DIP (0.453", 11.50mm), Top Port | | TBPDLNS150PGUCV.pdf |