 | VJ0402D0R2BLCAC | 0.20pF 200V 세라믹 커패시터 C0G, NP0 0402(1005 미터법) 0.040" L x 0.020" W(1.02mm x 0.51mm) | | VJ0402D0R2BLCAC.pdf |
 | GRM43ER72A225KA01L | 2.2µF 100V 세라믹 커패시터 X7R 1812(4532 미터법) 0.177" L x 0.126" W(4.50mm x 3.20mm) | | GRM43ER72A225KA01L.pdf |
 | BFC230364124 | 0.12µF Film Capacitor 160V 630V Polyester, Metallized Radial 0.689" L x 0.224" W (17.50mm x 5.70mm) | | BFC230364124.pdf |
 | P6KE33A | TVS DIODE 28.2VWM 45.7VC DO204AC | | P6KE33A.pdf |
 | NX8045GB-6MHZ-STD-CSF-3 | 6MHz ±20ppm 수정 8pF 250옴 -10°C ~ 70°C 표면실장(SMD, SMT) 2-SMD, 무연(DFN, LCC) | | NX8045GB-6MHZ-STD-CSF-3.pdf |
 | 416F40023CSR | 40MHz ±20ppm 수정 시리즈 100옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F40023CSR.pdf |
 | 406I35E10M00000 | 10MHz ±30ppm 수정 20pF 60옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 406I35E10M00000.pdf |
 | CDRH125NP-470MC | 47µH Shielded Inductor 1.8A 75 mOhm Max Nonstandard | | CDRH125NP-470MC.pdf |
 | CE201210-68NJ | 68nH Unshielded Multilayer Inductor 300mA 800 mOhm Max 0805 (2012 Metric) | | CE201210-68NJ.pdf |
 | PA4025.181HLT | 180nH Unshielded Wirewound Inductor 58A 0.29 mOhm Nonstandard | | PA4025.181HLT.pdf |
 | 25J900 | RES 900 OHM 5W 5% AXIAL | | 25J900.pdf |
 | Y0062103R902T0L | RES 103.902 OHM 0.6W 0.01% RAD | | Y0062103R902T0L.pdf |