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| VJ1210Y392JBRAT4X | 3900pF 1500V(1.5kV) 세라믹 커패시터 X7R 1210(3225 미터법) 0.132" L x 0.098" W(3.35mm x 2.50mm) | | VJ1210Y392JBRAT4X.pdf |
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| SMBJ11CD-M3/H | TVS DIODE 11VWM 17.9VC DO214AA | | SMBJ11CD-M3/H.pdf |
| ABM7-9.8304MHZ-D2Y-T | 9.8304MHz ±20ppm 수정 18pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) 2-SMD, 무연(DFN, LCC) | | ABM7-9.8304MHZ-D2Y-T.pdf |
| 416F26013IDR | 26MHz ±10ppm 수정 18pF 200옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F26013IDR.pdf |
| DSC1001AI2-048.0000T | 48MHz CMOS MEMS (Silicon) Oscillator Surface Mount 1.8 V ~ 3.3 V 7.2mA Standby (Power Down) | | DSC1001AI2-048.0000T.pdf |
| 22R104C | 100µH Unshielded Wirewound Inductor 670mA 390 mOhm Max Radial | | 22R104C.pdf |
| TNPW2512169KBEEY | RES SMD 169K OHM 0.1% 1/2W 2512 | | TNPW2512169KBEEY.pdf |
| ERX-1SJ3R3 | RES 3.3 OHM 1W 5% AXIAL | | ERX-1SJ3R3.pdf |
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| NBPDANS250MGUNV | Pressure Sensor 3.63 PSI (25 kPa) Vented Gauge Male - 0.75" (1.91mm) Tube 0 mV ~ 54.5 mV (5V) 4-DIP (0.453", 11.50mm), Top Port | | NBPDANS250MGUNV.pdf |