 | VJ1812A221JBLAT4X | 220pF 630V 세라믹 커패시터 C0G, NP0 1812(4532 미터법) 0.183" L x 0.126" W(4.65mm x 3.20mm) | | VJ1812A221JBLAT4X.pdf |
 | MKP385516160JYI2T0 | 1.6µF Film Capacitor 550V 1600V (1.6kV) Polypropylene (PP), Metallized Radial 2.264" L x 0.984" W (57.50mm x 25.00mm) | | MKP385516160JYI2T0.pdf |
 | 416F40035CLR | 40MHz ±30ppm 수정 12pF 100옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F40035CLR.pdf |
 | 8Z25070006 | 25MHz ±30ppm 수정 18pF -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 8Z25070006.pdf |
 | SIT8008BI-71-33E-99.533000D | OSC XO 3.3V 99.533MHZ OE | | SIT8008BI-71-33E-99.533000D.pdf |
 | SIT9003AI-3-28SO | 1MHz ~ 110MHz LVCMOS, LVTTL MEMS (Silicon) Programmable Oscillator Surface Mount 2.8V 4.1mA Standby | | SIT9003AI-3-28SO.pdf |
 | 2N6505G | THYRISTOR SCR 25A 100V TO220AB | | 2N6505G.pdf |
 | UPA2385T1P-E1-A | MOSFET N-CH | | UPA2385T1P-E1-A.pdf |
 | MCR03ERTF5761 | RES SMD 5.76K OHM 1% 1/10W 0603 | | MCR03ERTF5761.pdf |
 | Y149618K2000B0W | RES SMD 18.2KOHM 0.1% 0.15W 1206 | | Y149618K2000B0W.pdf |
 | MS4800S-14-0880-10X-10R-RMX | SAFETY LIGHT CURTAIN | | MS4800S-14-0880-10X-10R-RMX.pdf |
 | E2A-M12LN05-M1-B1 | Inductive Proximity Sensor 0.197" (5mm) IP67, IP69K Cylinder, Threaded - M12 | | E2A-M12LN05-M1-B1.pdf |