| K181K15X7RH5UL2 | 180pF 100V 세라믹 커패시터 X7R 방사 0.157" L x 0.098" W(4.00mm x 2.50mm) | | K181K15X7RH5UL2.pdf |
| CS-023-114.285M | 114.285MHz ±20ppm 수정 18pF 80옴 -40°C ~ 85°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | CS-023-114.285M.pdf |
| ABM8-16.384MHZ-B2-T | 16.384MHz ±20ppm 수정 18pF 70옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | ABM8-16.384MHZ-B2-T.pdf |
| LP240F23IET | 24MHz ±20ppm 수정 20pF 30옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US | | LP240F23IET.pdf |
| 416F30033CAT | 30MHz ±30ppm 수정 10pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F30033CAT.pdf |
| SIT9003AC-24-33DB-30.00000T | OSC XO 3.3V 30MHZ SD 0.25% | | SIT9003AC-24-33DB-30.00000T.pdf |
| DSC1004CI2-010.0000 | 10MHz CMOS MEMS (Silicon) Oscillator Surface Mount 1.8 ~ 3.3V 6.5mA Standby (Power Down) | | DSC1004CI2-010.0000.pdf |
| HKQ0603U0N8B-T | 0.8nH Unshielded Multilayer Inductor 900mA 60 mOhm Max 0201 (0603 Metric) | | HKQ0603U0N8B-T.pdf |
| 4232-333H | 33µH Unshielded Wirewound Inductor 150mA 9.2 Ohm Max 2-SMD | | 4232-333H.pdf |
| SPD74-824M | 820µH Shielded Wirewound Inductor 300mA 5.2 Ohm Max Nonstandard | | SPD74-824M.pdf |
| CQY80NG | Optoisolator Transistor with Base Output 5000Vrms 1 Channel 6-DIP | | CQY80NG.pdf |
| MS46SR-30-1570-Q2-30X-30R-NO-F | SYSTEM | | MS46SR-30-1570-Q2-30X-30R-NO-F.pdf |