| B43821A2106M | 10µF 200V Aluminum Capacitors Radial, Can 3000 Hrs @ 85°C | | B43821A2106M.pdf |
| C1206C224K8RALTU | 0.22µF 10V 세라믹 커패시터 X7R 1206(3216 미터법) 0.126" L x 0.063" W(3.20mm x 1.60mm) | | C1206C224K8RALTU.pdf |
| 301S42E201JV4E | 200pF 300V 세라믹 커패시터 C0G, NP0 1111(2828 미터법) 0.110" L x 0.110" W(2.79mm x 2.79mm) | | 301S42E201JV4E.pdf |
| MKP385412100JIP2T0 | 0.12µF Film Capacitor 350V 1000V (1kV) Polypropylene (PP), Metallized Radial 1.024" L x 0.335" W (26.00mm x 8.50mm) | | MKP385412100JIP2T0.pdf |
| NX8045GB-40.000000MHZ | 40MHz ±50ppm 수정 8pF 50옴 -10°C ~ 70°C 표면실장(SMD, SMT) 2-SMD, 무연(DFN, LCC) | | NX8045GB-40.000000MHZ.pdf |
| 416F25025CDR | 25MHz ±20ppm 수정 18pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F25025CDR.pdf |
| 416F36012ALT | 36MHz ±10ppm 수정 12pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F36012ALT.pdf |
| 1264EY-2R2N=P3 | 2.2µH Shielded Wirewound Inductor 7.8A 19.2 mOhm Max Nonstandard | | 1264EY-2R2N=P3.pdf |
| HRG3216P-1911-B-T1 | RES SMD 1.91K OHM 0.1% 1W 1206 | | HRG3216P-1911-B-T1.pdf |
| YC248-FR-075K76L | RES ARRAY 8 RES 5.76K OHM 1606 | | YC248-FR-075K76L.pdf |
| 93J470 | RES 470 OHM 3.25W 5% AXIAL | | 93J470.pdf |
| Y162240R0000Q9L | RES 40 OHM 8W 0.02% TO220-2 | | Y162240R0000Q9L.pdf |