 | C0603C331J3GALTU | 330pF 25V 세라믹 커패시터 C0G, NP0 0603(1608 미터법) 0.063" L x 0.031" W(1.60mm x 0.80mm) | | C0603C331J3GALTU.pdf |
-Kemet.jpg) | C1206C181K2GACTU | 180pF 200V 세라믹 커패시터 C0G, NP0 1206(3216 미터법) 0.126" L x 0.063" W(3.20mm x 1.60mm) | | C1206C181K2GACTU.pdf |
 | MKP385315063JCM2B0 | 0.015µF Film Capacitor 220V 630V Polypropylene (PP), Metallized Radial 0.394" L x 0.157" W (10.00mm x 4.00mm) | | MKP385315063JCM2B0.pdf |
 | MKP385343160JII2B0 | 0.043µF Film Capacitor 550V 1600V (1.6kV) Polypropylene (PP), Metallized Radial 1.024" L x 0.276" W (26.00mm x 7.00mm) | | MKP385343160JII2B0.pdf |
 | MWS2 S95 | TCO 250VAC 20A 100C(212F) RADIAL | | MWS2 S95.pdf |
 | 416F24035ADR | 24MHz ±30ppm 수정 18pF 200옴 -10°C ~ 60°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F24035ADR.pdf |
 | 416F32022CDR | 32MHz ±20ppm 수정 18pF 200옴 -20°C ~ 70°C 표면실장(SMD, SMT) 4-SMD, 무연(DFN, LCC) | | 416F32022CDR.pdf |
 | APTM100A12STG | MOSFET 2N-CH 1000V 68A LP8W | | APTM100A12STG.pdf |
 | 2510-76J | 150µH Unshielded Inductor 49mA 19 Ohm Max 2-SMD | | 2510-76J.pdf |
 | HF1008R-821G | 820nH Unshielded Inductor 273mA 2 Ohm Max Nonstandard | | HF1008R-821G.pdf |
 | CRCW1218182RFKEK | RES SMD 182 OHM 1% 1W 1218 | | CRCW1218182RFKEK.pdf |
 | CMF5516K000FKEB | RES 16K OHM 1/2W 1% AXIAL | | CMF5516K000FKEB.pdf |