Manufacturers:

Description:
28.63636MHz ±30ppm 수정 20pF 30옴 -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
28.63636MHz ±30ppm 수정 18pF 30옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
28.63636MHz ±30ppm 수정 20pF 30옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
28.63636MHz ±30ppm 수정 18pF 30옴 -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
28.63636MHz ±30ppm 수정 20pF 30옴 -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
28.63636MHz ±30ppm 수정 18pF 30옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
28.63636MHz ±30ppm 수정 20pF 30옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
2µH Unshielded Wirewound Inductor 250mA 1.45 Ohm Nonstandard


Manufacturers:

Description:
30MHz ±20ppm 수정 18pF -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±20ppm 수정 20pF -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±20ppm 수정 18pF -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±20ppm 수정 20pF -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 18pF -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 20pF -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 18pF -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 20pF -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 18pF -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 20pF -20°C ~ 70°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 18pF -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
30MHz ±30ppm 수정 20pF -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
DIODE GEN PURP 50V 500MA DO213AA