Manufacturers:

Description:
6.144MHz ±50ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
6.3MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
6.5MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
6.5MHz ±30ppm 수정 18pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
6.76438MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.3728MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.3728MHz ±30ppm 수정 20pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.3728MHz ±30ppm 수정 18pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.6MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.68MHz ±30ppm 수정 16pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.68MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.68MHz ±30ppm 수정 18pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
7.68MHz ±50ppm 수정 12pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
8MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
8MHz ±30ppm 수정 18pF 100옴 -40°C ~ 85°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
8MHz ±50ppm 수정 20pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
8.192MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
8.192MHz ±50ppm 수정 16pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
9MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
9.8304MHz ±30ppm 수정 18pF 100옴 -10°C ~ 60°C 표면실장(SMD, SMT) HC49/US


Manufacturers:

Description:
10µH Shielded Wirewound Inductor 2.8A 132 mOhm Max Nonstandard